Published July 15, 2006 | Version v1
Journal article

Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductor

  • 1. CEA-CNRS-UJF group 'Nanophysique et Semiconducteurs', DRFMC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)
  • 2. European Synchrotron Radiation Facility (ESRF), Boite Postale 220, 38043 Grenoble (France)
  • 3. Laboratoire Louis Neel, CNRS, Boite Postale 166, 38042 Grenoble (France)

Description

Intrinsic ferromagnetism in the high-quality wurtzite Ga0.937Mn0.063N semiconductor is unambiguously demonstrated by both macroscopic magnetization measurements and x-ray magnetic circular dichroism. The structural quality of the samples grown by plasma-assisted molecular beam epitaxy is confirmed by x-ray diffraction and x-ray linear dichroism. The Curie temperature of a (Ga,Mn)N sample with 6.3% Mn is ≅8 K with a spontaneous magnetic moment of 2.4μB per Mn at 2 K

Additional details

Identifiers

Publishing Information

Journal Title
Physical Review. B, Condensed Matter and Materials Physics
Journal Volume
74
Journal Issue
4
Journal Page Range
p. 041306-041306.4
ISSN
1098-0121

Optional Information

Notes
(c) 2006 The American Physical Society