Published September 2011
| Version v1
Journal article
Analytical and numerical calculations of photoconductivity in porous silicon
- 1. Ivan Franko National University of Lviv, L'viv (Ukraine)
Description
The results of analytical and numerical calculations of photoconductivity in porous silicon with spherical and cylindrical pores are reported. The dependence of photoconductivity on the surface recombination rate has been analyzed for various pore radii, r0, and various average distances between pores, 2R. The photoconductivity of porous silicon increases with the distance between pores and decreases, as the pore radius or the surface recombination rate grows.
Additional details
Additional titles
- Original title (Ukrainian)
- Analyitichnyi ta chisel'nyi rozrakhunki fotoprovyidnostyi poruvatogo kremnyiyu
Publishing Information
- Journal Title
- Ukrayins'kij Fyizichnij Zhurnal (Kyiv)
- Journal Volume
- 56
- Journal Issue
- no.9
- Journal Page Range
- p. 904-909
- ISSN
- 0372-400X
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 43128711
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- CALCULATION METHODS; CYLINDRICAL CONFIGURATION; PHOTOCONDUCTIVITY; POROUS MATERIALS; RECOMBINATION; SILICON; SIMULATION; SPHERICAL CONFIGURATION; SURFACE PROPERTIES
- Descriptors DEC
- CONFIGURATION; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; MATERIALS; PHYSICAL PROPERTIES; SEMIMETALS