Published October 8, 2010 | Version v1
Journal article

Study On Laser-Induced Periodic Structures And Photovoltaic Application

  • 1. LP3 CNRS UMR 6182 Luminy, Case 917, 13009 Marseille (France)
  • 2. Laboratoire Hubert Curien CNRS UMR 5516, rue Pr. Benoit Lauras, 42000 Saint-Etienne (France)
  • 3. IEMN CNRS UMR 8520, Av Poincare, 59652 Villeneuve d'Ascq CEDEX (France)
  • 4. IM2NP CNRS UMR 6122, Av. Esc. Normandie Niemen, 13397 Marseille CEDEX 20 (France)
  • 5. IBS, ZI Peynier Rousset-Rue Gaston Imbert Prolongee-13790 Peynier (France)

Description

We have irradiated silicon with a series of femtosecond laser pulses to improve light absorption at the silicon surface. The laser treated surface namely black silicon shows excellent optical properties on mono and multicrystalline silicon wafers with a reflectivity reduction down to 3%, without crystal orientation dependence. After the laser process, the front side of samples has been boron-implanted by Plasma Immersion Ion Implantation to create the 3D p+ junction. Improved electrical performances have also been demonstrated with a 57% increase in the photocurrent, compared to non-texturized surface.

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1278
Journal Issue
1
Journal Page Range
p. 576-581
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
International symposium on high power laser ablation 2010
Dates
18-22 Apr 2010
Place
Santa Fe, NM (United States)

Optional Information

Notes
(c) 2010 American Institute of Physics