Published October 8, 2010
| Version v1
Journal article
Study On Laser-Induced Periodic Structures And Photovoltaic Application
Creators
- 1. LP3 CNRS UMR 6182 Luminy, Case 917, 13009 Marseille (France)
- 2. Laboratoire Hubert Curien CNRS UMR 5516, rue Pr. Benoit Lauras, 42000 Saint-Etienne (France)
- 3. IEMN CNRS UMR 8520, Av Poincare, 59652 Villeneuve d'Ascq CEDEX (France)
- 4. IM2NP CNRS UMR 6122, Av. Esc. Normandie Niemen, 13397 Marseille CEDEX 20 (France)
- 5. IBS, ZI Peynier Rousset-Rue Gaston Imbert Prolongee-13790 Peynier (France)
Description
We have irradiated silicon with a series of femtosecond laser pulses to improve light absorption at the silicon surface. The laser treated surface namely black silicon shows excellent optical properties on mono and multicrystalline silicon wafers with a reflectivity reduction down to 3%, without crystal orientation dependence. After the laser process, the front side of samples has been boron-implanted by Plasma Immersion Ion Implantation to create the 3D p+ junction. Improved electrical performances have also been demonstrated with a 57% increase in the photocurrent, compared to non-texturized surface.
Additional details
Identifiers
- DOI
- 10.1063/1.3507149;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1278
- Journal Issue
- 1
- Journal Page Range
- p. 576-581
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- International symposium on high power laser ablation 2010
- Dates
- 18-22 Apr 2010
- Place
- Santa Fe, NM (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42026170
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABLATION; BORON; CRYSTALS; ION IMPLANTATION; ORIENTATION; PERFORMANCE; PERIODICITY; PHOTOVOLTAIC EFFECT; PULSED IRRADIATION; REFLECTIVITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR JUNCTIONS; SILICON; SURFACES
- Descriptors DEC
- ELECTRON MICROSCOPY; ELEMENTS; IRRADIATION; MICROSCOPY; OPTICAL PROPERTIES; PHOTOELECTRIC EFFECT; PHYSICAL PROPERTIES; SEMIMETALS; SURFACE PROPERTIES; VARIATIONS
Optional Information
- Notes
- (c) 2010 American Institute of Physics