Published January 1999 | Version v1
Journal article Metadata-only

Impact of mesa and planar processes on the radiation hardness of si detectors

Creators

  • 1. ASP, Associazione per lo Sviluppo Scientifico del Piemonte, Turin (Italy)
  • 2. CERN, Geneva (Switzerland)

Description

Various types of silicon mono-crystals (epitaxial of different thickness, standard and oxygenated float zone material) have been grown and processed with mesa and planar technologies to produce 5 x 5 mm2 pad detectors. The detectors have been irradiated with 24 GeV/c protons. Electrical properties of the detectors have been studied, before and after irradiation, in order to find the correlation with the material type, the fabrication process and the radiation hardness

Additional details

Publishing Information

Journal Title
Nuovo Cimento della Societa Italiana di Fisica. A, Nuclei Particles and Fields
Journal Volume
112A
Journal Issue
1-2
Journal Page Range
p. 1-12
ISSN
1124-1861

INIS

Country of Publication
Italy
Country of Input or Organization
Italy
INIS RN
31001794
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
IONS; NEUTRONS; RADIATION DETECTORS; RADIATION EFFECTS; RADIATION HARDENING
Descriptors DEC
BARYONS; CHARGED PARTICLES; ELEMENTARY PARTICLES; FERMIONS; HADRONS; HARDENING; MEASURING INSTRUMENTS; NUCLEONS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS