Electroluminescence properties of In-doped Zn2SiO4 thin films prepared by sol-gel process
- 1. Department of Vehicle and Mechanical Engineering, Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi Tempaku-ku, Nagoya 468-8502 (Japan)
- 2. Technical Administration Division, KICTEC INC., 150 Umegaoka, Usaka, Agui, Chita, Aichi 470-2295 (Japan)
- 3. Department of Civil Engineering, Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502 (Japan)
Description
The effect of In doping on the electroluminescence (EL) properties of Zn2SiO4:In thin films was investigated. In-doped Zn2SiO4 thin films were deposited on BaTiO3 substrates and their EL properties were characterized in this study. X-ray powder diffraction patterns of In-doped Zn2SiO4 powders revealed a single phase of Zn2SiO4 for In concentrations up to approximately 1.5 mol%, whereas a secondary phase of In2O3 was observed for In concentrations in the range of 2-10 mol%. The maximum luminance of thin film electroluminescent (TFEL) devices varied significantly with the amount of In doping. The highest luminance with blue emission was obtained when 2 mol% In was doped. The blue emission of In-doped Zn2SiO4 thin film may be related to the In substitution for Zn. The 2 mol% In-doped Zn2SiO4 thin film exhibited blue emission with CIE color coordinates of x=0.208 and y=0.086.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2012.07.023Additional details
Identifiers
- DOI
- 10.1016/j.physb.2012.07.023;
- PII
- S0921-4526(12)00708-9;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 407
- Journal Issue
- 21
- Journal Page Range
- p. 4308-4312
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44041556
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DOPED MATERIALS; ELECTROLUMINESCENCE; INDIUM ADDITIONS; SOL-GEL PROCESS; SUBSTRATES; X-RAY DIFFRACTION; ZINC COMPOUNDS; ZINC SILICATES
- Descriptors DEC
- ALLOYS; COHERENT SCATTERING; DIFFRACTION; EMISSION; INDIUM ALLOYS; LUMINESCENCE; MATERIALS; OXYGEN COMPOUNDS; PHOTON EMISSION; SCATTERING; SILICATES; SILICON COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.