Amorphous semiconductors equivalent to crystalline semiconductors
Creators
Description
A method of making an amorphous semiconductor film or the like having desirable photoconductive and/or other properties comprises forming an amorphous semiconductor film, preferably by vaporizing silicon or the like in an evacuated space and condensing the same on a substrate in such space, and preferably at the same time, introducing at least two or three compensating or altering agents into the film, like activated hydrogen and fluorine, in amounts which substantially reduce or eliminate the localized states in the energy gap thereof so that greatly increased diffusion lengths for solar cell applications is obtained and dopants can be effectively added to produce P or N amorphous semiconductor films so that the films function like similar crystalline materials
Availability note (English)
U.S. Commissioner of Patents, Washington, D.C. 20231, USA, $.50.Additional details
Additional titles
- Augmented title (English)
- Patent
Publishing Information
- Imprint Pagination
- v p.
- IPC:
- Int. Cl.H01L 45/00.
- IPC
- Int. Cl.H01L 45/00.
- Patent number
- US patent document 4,217,374/A/
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 12595188
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Non-conventional Literature
- Descriptors DEI
- AMORPHOUS STATE; DIFFUSION LENGTH; ENERGY GAP; FABRICATION; FILMS; FLUORINE; HYDROGEN; PHOTOCONDUCTORS; SEMICONDUCTOR MATERIALS; SILICON; SILICON SOLAR CELLS; VAPOR PLATING
- Descriptors DEC
- DEPOSITION; DIRECT ENERGY CONVERTERS; ELEMENTS; HALOGENS; NONMETALS; PLATING; SEMIMETALS; SOLAR CELLS; SURFACE COATING