Published August 12, 1980 | Version v1
Patent

Amorphous semiconductors equivalent to crystalline semiconductors

Description

A method of making an amorphous semiconductor film or the like having desirable photoconductive and/or other properties comprises forming an amorphous semiconductor film, preferably by vaporizing silicon or the like in an evacuated space and condensing the same on a substrate in such space, and preferably at the same time, introducing at least two or three compensating or altering agents into the film, like activated hydrogen and fluorine, in amounts which substantially reduce or eliminate the localized states in the energy gap thereof so that greatly increased diffusion lengths for solar cell applications is obtained and dopants can be effectively added to produce P or N amorphous semiconductor films so that the films function like similar crystalline materials

Availability note (English)

U.S. Commissioner of Patents, Washington, D.C. 20231, USA, $.50.

Additional details

Additional titles

Augmented title (English)
Patent

Publishing Information

Imprint Pagination
v p.
IPC:
Int. Cl.H01L 45/00.
IPC
Int. Cl.H01L 45/00.
Patent number
US patent document 4,217,374/A/

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
12595188
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Non-conventional Literature
Descriptors DEI
AMORPHOUS STATE; DIFFUSION LENGTH; ENERGY GAP; FABRICATION; FILMS; FLUORINE; HYDROGEN; PHOTOCONDUCTORS; SEMICONDUCTOR MATERIALS; SILICON; SILICON SOLAR CELLS; VAPOR PLATING
Descriptors DEC
DEPOSITION; DIRECT ENERGY CONVERTERS; ELEMENTS; HALOGENS; NONMETALS; PLATING; SEMIMETALS; SOLAR CELLS; SURFACE COATING