Published February 15, 2013
| Version v1
Journal article
Structural and electronic properties of graphene-based junctions for spin-filtering: The graphene/Al/Ni(1 1 1) intercalation-like system
- 1. Institut für Festkörperphysik, Technische Universität Dresden, 01062 Dresden (Germany)
- 2. Fritz-Haber-Institut der Max-Planck-Gesellschaft, 14195 Berlin (Germany)
- 3. Institut für Chemie und Biochemie, Freie Universität Berlin, Takustraße 3, 14195 Berlin (Germany)
Description
The atomic and electronic structure of the graphene/Al/Ni(1 1 1) system is studied via combination of LEED and spectroscopic methods (X-ray absorption, core-level and valence-band photoelectron spectroscopy), respectively. These data demonstrating the (2 × 2) overstructure and the decoupling of the graphene layer from the substrate (with respect to graphene/Ni(1 1 1)) are in very good agreement with DFT calculations supporting nearly free-standing state of graphene in this system (with small n-doping). The perspectives of application of Al-based intercalation-like systems are discussed.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2012.04.067Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2012.04.067;
- PII
- S0169-4332(12)00721-0;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 267
- Journal Page Range
- p. 8-11
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 11. international conference on atomically controlled surfaces, interfaces and nanostructures
- Dates
- 3-7 Oct 2011
- Place
- St. Petersburg (Russian Federation)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46002793
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION; ABSORPTION SPECTROSCOPY; ALUMINIUM; CLATHRATES; DENSITY FUNCTIONAL METHOD; DOPED MATERIALS; ELECTRIC CONTACTS; ELECTRICAL PROPERTIES; ELECTRON DIFFRACTION; ELECTRONIC STRUCTURE; GRAPHENE; LAYERS; NICKEL; N-TYPE CONDUCTORS; SEMICONDUCTOR JUNCTIONS; SPIN; SUBSTRATES; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY; X-RAY SPECTROSCOPY
- Descriptors DEC
- ANGULAR MOMENTUM; CALCULATION METHODS; CARBON; COHERENT SCATTERING; DIFFRACTION; ELECTRICAL EQUIPMENT; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; EQUIPMENT; IONIZING RADIATIONS; MATERIALS; METALS; NONMETALS; PARTICLE PROPERTIES; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; RADIATIONS; SCATTERING; SEMICONDUCTOR MATERIALS; SORPTION; SPECTROSCOPY; TRANSITION ELEMENTS; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.