Effect of annealing temperature on the surface morphology and electrical properties of aluminum doped zinc oxide thin films prepared by sol-gel spin-coating method
Creators
- 1. Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)
Description
Aluminum doped zinc oxide thin films were prepared through sol gel and spin coating technique from zinc acetate dihydrate and aluminum nitrate nanohydrate in alcoholic solution. The electrical properties and surface morphology study are investigated for the thin films annealed at 350∼500 deg. C. Zinc oxide thin films deposited on glass and silicon substrates were characterized using electron microscopy (SEM) and current-voltage (I-V) measurement scanning for surface morphology and electrical properties study respectively. The SEM investigation shows that zinc oxide thin films are denser at higher annealing temperature. The result indicates electrical properties of aluminum doped zinc oxide thin films are improved with annealing temperatures. The resistivity of aluminum doped zinc oxide thin films are decreased with annealing temperature up to 500 deg. C
Additional details
Identifiers
- DOI
- 10.1063/1.2940614;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1017
- Journal Issue
- 1
- Journal Page Range
- p. 139-143
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- National physics conference 2007 on current issues of physics in Malaysia
- Acronym
- PERFIK 2007
- Dates
- 26-28 Dec 2007
- Place
- Kuala Terengganu (Malaysia)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40023209
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM; ANNEALING; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; MORPHOLOGY; NANOSTRUCTURES; SCANNING ELECTRON MICROSCOPY; SILICON; SOL-GEL PROCESS; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE; THIN FILMS; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELEMENTS; FILMS; HEAT TREATMENTS; MATERIALS; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMIMETALS; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2008 American Institute of Physics