Published May 21, 2010
| Version v1
Journal article
Cr3Si doped by Co studied by muon spin relaxation and scanning electron microscopy techniques
- 1. Faculty of Physics, University of Bialystok, Lipowa 41, 15-424 Bialystok (Poland)
- 2. Faculty of Physics and Applied Computer Science, University of Mining and Metallurgy, Mickiewicza 30, 30-052 Cracow (Poland)
- 3. ISIS Facility, Rutherford Appleton Laboratory, Chilton, Didcot OX11 0QX (United Kingdom)
- 4. The Andrzej Soltan Institute for Nuclear Studies, 05-400 Swierk-Otwock (Poland)
Description
Cr3-xCoxSi alloys were studied using muon spin relaxation (μSR) and scanning electron microscopy (SEM) techniques. The ferromagnetism observed in non-annealed samples is due solely to cobalt precipitates. Majority of cobalt builds into the A15-type of lattice upon annealing and enhances only its paramagnetic susceptibility. Dynamics of muons in the alloys show a nonmonotonic behaviour with temperature in the temperature range between 150 and 200 K. This effect is likely to be due to the localization of the positive muon at specific interstitial positions in the A15 structure.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jallcom.2010.03.119Additional details
Identifiers
- DOI
- 10.1016/j.jallcom.2010.03.119;
- PII
- S0925-8388(10)00607-9;
Publishing Information
- Journal Title
- Journal of Alloys and Compounds
- Journal Volume
- 498
- Journal Issue
- 1
- Journal Page Range
- p. 5-12
- ISSN
- 0925-8388
- CODEN
- JALCEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42033393
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CHROMIUM ALLOYS; CHROMIUM SILICIDES; COBALT ALLOYS; DOPED MATERIALS; FERROMAGNETISM; INTERSTITIALS; MUON SPIN RELAXATION; PARAMAGNETISM; PRECIPITATION; SCANNING ELECTRON MICROSCOPY; SILICON ALLOYS; SPECTROSCOPY; TEMPERATURE RANGE 0065-0273 K; X-RAY DIFFRACTION
- Descriptors DEC
- ALLOYS; CHROMIUM COMPOUNDS; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFRACTION; ELECTRON MICROSCOPY; HEAT TREATMENTS; MAGNETISM; MATERIALS; MICROSCOPY; POINT DEFECTS; RELAXATION; SCATTERING; SEPARATION PROCESSES; SILICIDES; SILICON COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.