Published September 2009
| Version v1
Journal article
Phase formation under the effect of spinodal decomposition in epitaxial alloys of GaxIn1-xP/GaAs(100) heterostructures
Creators
- 1. Voronezh State University (Russian Federation)
- 2. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Description
The effect of instability of alloys of GaxIn1-xP/GaAs(100) semiconductor epitaxial heterostructures in the composition region x ∼ 0.50 is studied by X-ray diffraction and electron microscopy. The possibility of emergence of modulated relaxation structures on the surface of a GaxIn1-xP alloy is shown. This phenomenon is accompanied by the emergence of satellites of main X-ray reflections corresponding to a single-phase structure.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 43
- Journal Issue
- 9
- Journal Page Range
- p. 1221-1225
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43040214
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALLOYS; DECOMPOSITION; ELECTRON MICROSCOPY; EPITAXY; GALLIUM ARSENIDES; INSTABILITY; REFLECTION; RELAXATION; SEMICONDUCTOR MATERIALS; SURFACES; X RADIATION; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL REACTIONS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; IONIZING RADIATIONS; MATERIALS; MICROSCOPY; PNICTIDES; RADIATIONS; SCATTERING
Optional Information
- Copyright
- Copyright (c) 2009 Pleiades Publishing, Ltd.