Radiation detector on a semiconductor base

The invention can be applied to the semiconductor element generation in particular of sensor elements on Si-base. It allows a low-cost generation with an output of => 95% despite of the large detector surface required. The failure density at the p-n junction has been reduced. The space-charge region overlaps the respective adjoining p-n junction. In the case of a complete depletion after an inverse voltage has been applied a galvanic coupling of the small-sized p-n junction of a strip is guaranteed by a commom metal electrode