Published 2019 | Version v1
Journal article

Modeling the process of influence of silicon on the energy spectrum of carbon nano tubes

  • 1. M.Osimi Tajik Technical University, Dushanbe (Tajikistan)

Description

In this work, using the density functional theory method and the WIEN2k software package, the electron-energy structure of a carbon nano tube has been modeled. The object of the study was a chair-type carbon nano tube (3,3). Initial calculations showed that a carbon nano tube is a metallic material with a zero band gap. After that, repeated calculations were carried out in order to study the effect of another atoms on their energy structure after replacing Si atoms, since in this work, the transition of a carbon nano tube from a metallic material with a zero forbidden gap to a semiconductor material with a narrow forbidden gap was fixed. The paper presents the results of a study of the electronic structure of carbon nano tube (3,3) before and after doping. (author)

Availability note (English)

Available from http://elibrary.ru/

Additional details

Additional titles

Original title (Russian)
Моделирование процесса влияния силиция на енергетическиы спектр углеродных нанотрубок

Identifiers

Publishing Information

Journal Title
Vestnik Natsionalnogo Universiteta
Journal Volume
2
Journal Page Range
p. 191-196
ISSN
1993-6923

INIS

Country of Publication
Tajikistan
Country of Input or Organization
Tajikistan
INIS RN
53048745
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CARBON NANOTUBES; DENSITY FUNCTIONAL METHOD; ENERGY SPECTRA; PHYSICAL PROPERTIES; SILICON; SIMULATION
Descriptors DEC
CALCULATION METHODS; CARBON; ELEMENTS; NANOSTRUCTURES; NANOTUBES; NONMETALS; SEMIMETALS; SPECTRA; VARIATIONAL METHODS