Published 1990 | Version v1
Book Metadata-only

Deep level luminescence in InP

Creators

  • 1. Tata Inst. of Fundamental Research, Homi Bhabha Road, Bombay 400005 (India)

Description

The phonon features in the deep level luminescence (PL) bands related to Fe and Mn and native defects in InP have been identified and the line shape of the bands are analyzed using configuration coordinate model. A consistent set of phonon parameters is determined for the first time

Additional details

Additional titles

Subtitle (English)
Phonon feature analysis

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (USA)
ISBN
1-55899-051-8
Imprint Title
Impurities, defects and diffusion in semiconductors
Imprint Pagination
1050 p.
Journal Page Range
p. 185-188.

Conference

Title
Materials Research Society fall meeting.
Dates
27 Nov - 2 Dec 1989.
Place
Boston, MA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
22015670
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S74: ATOMIC AND MOLECULAR PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTAL DEFECTS; INDIUM PHOSPHIDES; IRON; LATTICE PARAMETERS; MANGANESE; PAIRING INTERACTIONS; PHONONS; PHOTOLUMINESCENCE
Descriptors DEC
CRYSTAL STRUCTURE; ELEMENTS; EMISSION; INDIUM COMPOUNDS; INTERACTIONS; LUMINESCENCE; METALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PNICTIDES; QUASI PARTICLES; TRANSITION ELEMENTS

Optional Information

Secondary number(s)
CONF-891119--.