Published 1999 | Version v1
Miscellaneous Open

The high dose response of silicon carbide MESFET

Creators

  • 1. CEA Saclay, Dept. d'Electronique et d'Instrumentation Nucleaire, LETI, 91 - Gif-sur-Yvette (France)
  • 2. Thomson-CSF Lab. Central de Recherches, 91 - Orsay (France)

Description

The performance of MESFET-SiC transistors submitted to 60Co gamma radiation has been studied. MESFETs irradiated in the passing mode present a satisfactorily behaviour till cumulated dose below 10 MGy(Si). The off-state operating mode is the most unfavourable, in this case a complete loss of functionality was observed, followed by a slow comeback to an almost normal functioning after several months of rest. (A.C.)

Availability note (English)

Available from INIS in electronic form

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Additional details

Additional titles

Original title (French)
Reponse d'un transistor MESFET SiC irradie a de tres fortes doses cumulees

Publishing Information

Imprint Pagination
[3 p.]
Report number
INIS-FR--2044

Conference

Title
5. European conference on radiation and its effects on components and systems
Original Conference Title
5. congres europeen les radiations et leurs effets sur les composants et les systemes
Dates
13-17 Sep 1999
Place
Abbaye de Fontevraud (France)

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
34078038
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
FIELD EFFECT TRANSISTORS; GAMMA RADIATION; JUNCTION TRANSISTORS; PERFORMANCE TESTING; PHYSICAL RADIATION EFFECTS; POST-IRRADIATION EXAMINATION; THRESHOLD DOSE
Descriptors DEC
DOSES; ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; RADIATION DOSES; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; TESTING; TRANSISTORS

Optional Information

Notes
3 refs.