Published August 20, 2010 | Version v1
Journal article

Electrical and optical properties of In2O3:Mo thin films prepared at various Mo-doping levels

  • 1. Thin Films Laboratory, Department of Physics, VIT University, Vellore 632014 (India)
  • 2. Department of Mechanical Engineering, University of Coimbra, Coimbra (Portugal)
  • 3. Department of Physics, Sri Venkateswara University, Tirupathi 517502 (India)

Description

The optically transparent conducting molybdenum-doped indium oxide thin films (In2O3:Mo) were prepared on glass substrates by an activated reactive evaporation method and the influence of molybdenum doping levels on the electrical and optical properties of the films had been investigated systematically. The films, synthesized at a substrate temperature of 573 K and a Mo-doping level of 3 at.%, exhibited a minimum electrical resistivity of 5.2 x 10-4 Ω cm and an average optical transmittance of 90% in the visible region with a band gap of 3.68 eV.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jallcom.2010.05.068

Additional details

Identifiers

DOI
10.1016/j.jallcom.2010.05.068;
PII
S0925-8388(10)01250-8;

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
504
Journal Issue
2
Journal Page Range
p. 351-356
ISSN
0925-8388
CODEN
JALCEU

Conference

Title
16. international symposium on metastable, amorphous and nanostructured materials
Acronym
ISMANAM 2009
Dates
5-9 Jul 2009
Place
Beijing (China)

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.