Effects of electron irradiation on analog and linearity performance of InP-based HEMT

In this paper, the effect of electron irradiation on analog and linearity performance for InP-based HEMT is investigated. The electron energy and fluence are 1 MeV and 1 × 10${}^{16}$ cm${}^{-2}$, respectively. The results show that the analog performance parameters, such as $g_m$, $g_d$, and TFG, indicate different variation trends after electron irradiation. Specifically, $g_m$ and $g_d$ are reduced, while TGF is increased. Therefore, the analog performance is improved for InP-based HEMT after electron irradiation. In addition, linearity metrics such as $g_{m2}$, $g_{m3}$, VIP2, VIP3, IIP3, and IMD3 have also been analyzed. The results indicate that the linearity performance improves for the device after electron irradiation.