Some peculiarities of current-voltage characteristics of nCdS-pCdTe-heterostructures with intermediate layer of d ≅ 1 μ m

The results of research of current transport mechanism in nCdS-pCdTe-heterostructures with intermediate layer of solid solution (d ≅ 1μ m and d/L ≅ 2 - 3, L - diffusion length of nonequilibrium carriers). It has shown that current-voltage characteristics of the structures have two sublinear parts with slow current decreasing. They are connected with the part of faster current decreasing. These sublinear current-voltage characteristics are explained by existence of a number of traps those cause independence of ambipolar drift velocity from carrier concentration. Possible mechanisms of appearance of part with fast current slump are discussed. (authors)