Interface-assisted magnetoresistance behavior for ultrathin NiFe films
Creators
- 1. Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China)
- 2. Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083 (China)
- 3. School of Materials and Chemical Engineering, Hainan University, Haikou 570228 (China)
Description
Interface-assisted magnetoresistance (MR) behavior has been studied in Ta/MgO/NiFe/MgO/Ta multilayers by inserting a Mg metal layer between the NiFe layer and the top MgO layer. It is shown that MR ratio is about 31% larger than that in the films without Mg insertion. X-ray photoelectron spectroscopy and high resolution transmission electron microscope analyses show that the enhanced MR is primarily ascribed to effective control of chemical states at the NiFe/MgO interface and crystallization of the top MgO layer. - Highlights: • We studied magnetic and electric transport properties of ultrathin NiFe films. • Interface chemical states have strong influence on MR in NiFe films. • Crystallization of the top MgO layer has influence on MR in NiFe films
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jmmm.2015.05.050Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2015.05.050;
- PII
- S0304-8853(15)30175-X;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 393
- Journal Page Range
- p. 419-422
- ISSN
- 0304-8853
- CODEN
- JMMMDC
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47038806
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHEMICAL STATE; CRYSTALLIZATION; INTERFACES; IRON ALLOYS; LAYERS; MAGNESIUM; MAGNESIUM OXIDES; MAGNETORESISTANCE; NICKEL ALLOYS; TANTALUM; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; ALKALINE EARTH METALS; ALLOYS; CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; ELEMENTS; FILMS; MAGNESIUM COMPOUNDS; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; REFRACTORY METALS; SPECTROSCOPY; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.