Published November 1, 2015 | Version v1
Journal article

Interface-assisted magnetoresistance behavior for ultrathin NiFe films

  • 1. Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China)
  • 2. Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083 (China)
  • 3. School of Materials and Chemical Engineering, Hainan University, Haikou 570228 (China)

Description

Interface-assisted magnetoresistance (MR) behavior has been studied in Ta/MgO/NiFe/MgO/Ta multilayers by inserting a Mg metal layer between the NiFe layer and the top MgO layer. It is shown that MR ratio is about 31% larger than that in the films without Mg insertion. X-ray photoelectron spectroscopy and high resolution transmission electron microscope analyses show that the enhanced MR is primarily ascribed to effective control of chemical states at the NiFe/MgO interface and crystallization of the top MgO layer. - Highlights: • We studied magnetic and electric transport properties of ultrathin NiFe films. • Interface chemical states have strong influence on MR in NiFe films. • Crystallization of the top MgO layer has influence on MR in NiFe films

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jmmm.2015.05.050

Additional details

Identifiers

DOI
10.1016/j.jmmm.2015.05.050;
PII
S0304-8853(15)30175-X;

Publishing Information

Journal Title
Journal of Magnetism and Magnetic Materials
Journal Volume
393
Journal Page Range
p. 419-422
ISSN
0304-8853
CODEN
JMMMDC

Optional Information

Copyright
Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.