Published February 28, 2000
| Version v1
Journal article
Metastable and bistable defects in silicon
- 1. Institute of Physics and Technology, Almaty (Kazakhstan)
Description
Existing data on the properties and structure of metastable and bistable defects in silicon are analyzed. Primary radiation-induced defects (vacancies, self-interstitial atoms, and Frenkel pairs), complexes of oxygen, carbon, hydrogen, and other impurity atoms and defects with negative correlation energy are considered. (reviews of topical problems)
Availability note (English)
Available from http://dx.doi.org/10.1070/PU2000v043n02ABEH000649Additional details
Identifiers
Publishing Information
- Journal Title
- Physics Uspekhi
- Journal Volume
- 43
- Journal Issue
- 2
- Journal Page Range
- p. 139-150
- ISSN
- 1063-7869
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40071111
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CARBON; HYDROGEN; INTERSTITIALS; OXYGEN; SILICON; VACANCIES
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; NONMETALS; POINT DEFECTS; SEMIMETALS