Published July 7, 2014 | Version v1
Journal article

Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

  • 1. CEMES-CNRS, 29 rue Jeanne Marvig, BP 94347, Toulouse Cedex 4 (France)
  • 2. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Barcelona (Spain)
  • 3. Institució Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, Spain and Dep. de Física, Univ. Autònoma de Barcelona, 08193 Bellaterra (Spain)
  • 4. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)

Description

A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe2O4 films can be grown epitaxially on Si(111) using a Y2O3 buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4 films present high crystal quality and high saturation magnetization.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
105
Journal Issue
1
Journal Page Range
p. 012401-012401.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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