Published July 7, 2014
| Version v1
Journal article
Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces
Creators
- 1. CEMES-CNRS, 29 rue Jeanne Marvig, BP 94347, Toulouse Cedex 4 (France)
- 2. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Barcelona (Spain)
- 3. Institució Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, Spain and Dep. de Física, Univ. Autònoma de Barcelona, 08193 Bellaterra (Spain)
- 4. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)
Description
A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe2O4 films can be grown epitaxially on Si(111) using a Y2O3 buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4 films present high crystal quality and high saturation magnetization.
Additional details
Identifiers
- DOI
- 10.1063/1.4887349;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 105
- Journal Issue
- 1
- Journal Page Range
- p. 012401-012401.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46010644
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BUFFERS; COBALT COMPOUNDS; COBALT OXIDES; CRYSTALS; EPITAXY; FERRITES; INTERFACES; LAYERS; MAGNETIZATION; SATURATION; SILICON; THIN FILMS; YTTRIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; COBALT COMPOUNDS; CRYSTAL GROWTH METHODS; ELEMENTS; FERRIMAGNETIC MATERIALS; FILMS; IRON COMPOUNDS; MAGNETIC MATERIALS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC