Non-planar solid phase epitaxial growth processes in ion-implanted GaAs

High resolution ion channelling and reflection electron diffraction techniques have been used to examine details of epitaxial regrowth in Ar+-ion-implanted GaAs(100) at furnace anneal temperatures of 4000C or less. In particular, the nature and extent of epitaxial regrowth during both isothermal and isochronal annealing has been investigated for various implant energies and for implant doses above and below the amorphous threshold. The results indicate the development of a non-planar growth interface during annealing which may lead, ultimately, to complex near-surface crystallization processes. Consistently with the observations and recent results from other laboratories, a model for the epitaxial regrowth of amorphous GaAs layers is proposed based upon non-uniform growth rates along the amorphous-crystalline interface which could arise from local stoichiometry imbalance. (Auth.)