Published December 31, 2003 | Version v1
Journal article

Evidence of electron-stimulated self-diffusion in GaN crystals

Description

In situ transmission electron microscopy (TEM) experiments revealed that dimples formed in hexagonal GaN thin crystals by irradiation of a focused TEM electron beam recovers to flatten the surface under a subsequent electron irradiation with a moderately defocused beam. The electron-stimulated recovery can be attributed neither to knock-on damage nor beam heating effects but to electronically enhanced self-diffusion in the GaN crystals

Additional details

Identifiers

DOI
10.1016/j.physb.2003.09.041;
PII
S0921452603006598;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
340-342
Journal Issue
3-4
Journal Page Range
p. 488-491
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
22. international conference on defects in semiconductors
Dates
28 Jul - 1 Aug 2003
Place
Aarhus (Denmark)

Optional Information

Copyright
Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.