Development of a new growth method of the semiconductor material CdTe, for obtaining imagers of X and gamma-ray
Description
This thesis aims at obtaining large dimension CdTe crystals, suited to X and γ-rays detection, by a new method of growth using the evaporation of the solvent tellurium as the driving force for crystallization, from a tellurium-rich solution of cadmium and tellurium. This method is called Process By Solvent Evaporation (PBSE) or in French, Methode par Evaporation de Solvant. Two essential points characterize it: it is carried out in an open tube, which allows its extension to large diameters, and the growth proceeds at constant temperature, which must ensure a better uniformity of the properties of the elaborated material. The results obtained by this PBSE method show that the wafers can be classified in three categories (under-evaporated, ideal, over-evaporated) depending on the imposed 'temperature/time of growth' couple. It appears that only the wafers elaborated under the ideal conditions have properties required by the X and γ-ray detection. The characterization of several detectors extracted from various wafers made it possible to evaluate the potential of this material as detector for X and γ-rays: the material shows characteristics comparable to those indicated for various detectors in the scientific literature or present on the commercial market (in term of resolution and μτ product). The study of the chlorine incorporation by SIMS analysis shows that the chlorine profiles in the thickness of the various detectors are increasing from the beginning of growth face to the end of growth face according to an hyperbolic law. A simple and unidimensional model is developed to describe what occurs during a PBSE experiment. This model, based on the method of finished volumes, discretizes the liquid phase into several layers. According to the laws and numerical values assigned to the physical phenomena involved in the process, the model predicts the existence of three possible situations, which were encountered experimentally. (O.M.)
Availability note (English)
Also available from Bibliotheque Universitaire de Sciences de Grenoble, 430 avenue de la Bibliotheque BP66 Domaine Universitaire, 38402 - Saint-Martin dHeres cedex (France)Files
48043873.pdf
Files
(7.1 MB)
| Name | Size | Download all |
|---|---|---|
|
md5:b9bd41dbb1eaa581a88200ff4035a465
|
7.1 MB | Preview Download |
Additional details
Additional titles
- Original title (French)
- Mise au point d'une nouvelle methode de croissance du materiau semiconducteur CdTe, en vue de l'obtention d'imageurs de rayonnements X et gamma
Publishing Information
- Imprint Pagination
- 223 p.
- Report number
- FRCEA-TH--1350
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 48043873
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Thesis
- Descriptors DEI
- CADMIUM TELLURIDES; CRYSTAL GROWTH METHODS; CRYSTALLIZATION; EVAPORATION; GAMMA RADIATION; RADIATION DETECTORS; RESEARCH PROGRAMS; SOLVENTS; X RADIATION
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; MEASURING INSTRUMENTS; PHASE TRANSFORMATIONS; RADIATIONS; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- 84 refs.; This record replaces 39104361