Published 2005
| Version v1
Miscellaneous
Some problems of MBE growth of epitaxial structures of semiconductor lasers for the band 980 nm
Creators
- 1. Institute of Electron Technology, Warsaw (Poland)
Description
no abstract available
Additional details
Additional titles
- Original title (English)
- Streszczenia 10. Seminarium Powierzchnia i Struktury Cienkowarstwowe
- Augmented title (English)
- InGaAs quantum wells
Publishing Information
- Imprint Title
- Abstracts Book of 10. Seminar Surface and Thin Film Structures
- Imprint Pagination
- 70 p.
- Journal Page Range
- [1 p.]
Conference
- Title
- 10. Seminar Surface and Thin Film Structures
- Original Conference Title
- 10. Seminarium Powierzchnia i Struktury Cienkowarstwowe
- Dates
- 17-21 May 2005
- Place
- Szklarska Poreba (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 37011062
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ARSENIDES; CALIBRATION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LAYERS; MANUFACTURING; MOLECULAR BEAM EPITAXY; OPTIMIZATION; SEMICONDUCTOR LASERS; THIN FILMS
- Descriptors DEC
- ARSENIC COMPOUNDS; CRYSTAL GROWTH METHODS; EPITAXY; FILMS; LASERS; PNICTIDES; SEMICONDUCTOR DEVICES; SOLID STATE LASERS
Optional Information
- Notes
- Imprint:Streszczenia 10. Seminarium Powierzchnia i Struktury Cienkowarstwowe