Search for Nagaoka ferromagnetism in non-magnetic doped semiconductors
Creators
- 1. Princeton Center for Theoretical Physics, Princeton University, Princeton, NJ 08544 (United States)
- 2. Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 (United States)
Description
While ferromagnetism at relatively high temperatures is seen in diluted magnetic semiconductors such as Ga1-xMnxAs, under certain conditions semiconductors doped with non-magnetic impurities may also exhibit a ferromagnetic ground state. We investigate the possibility of ferromagnetism in a generalized disordered Hubbard model designed to characterize hydrogenic centers in semiconductors. We demonstrate the occurrence of high spin ground states in clusters (e.g. doped quantum dots), and discuss the nature of the single-particle states in a positionally disordered three-dimensional system with a maximally spin-polarized ground state. In particular, we identify the mobility edges, and describe their dependence on impurity density and potential
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2007.10.366Additional details
Identifiers
- DOI
- 10.1016/j.physb.2007.10.366;
- PII
- S0921-4526(07)01204-5;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 403
- Journal Issue
- 5-9
- Journal Page Range
- p. 1508-1510
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- International conference on strongly correlated electron systems
- Acronym
- SCES'07
- Dates
- 13-18 May 2007
- Place
- Houston, TX (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39062421
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ARSENIC COMPOUNDS; DENSITY; DOPED MATERIALS; FERROMAGNETISM; GALLIUM COMPOUNDS; GROUND STATES; HUBBARD MODEL; IMPURITIES; MAGNETIC SEMICONDUCTORS; MANGANESE COMPOUNDS; MOBILITY; PARTICLES; POTENTIALS; QUANTUM DOTS; SPIN; SPIN ORIENTATION; THREE-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- ANGULAR MOMENTUM; CRYSTAL MODELS; ENERGY LEVELS; MAGNETISM; MATERIALS; MATHEMATICAL MODELS; NANOSTRUCTURES; ORIENTATION; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.