Published June 1998
| Version v1
Journal article
Electrical properties and sensitivity to all-round compression of electron irradiated Ga P
Creators
- 1. Sibirskij Fiziko-Tekhnicheskij Inst. im. V. D. Kuznetsova, Tomskij Gosuniversitet, Tomsk (Russian Federation)
Description
Investigation results are presented on dose dependences of electric properties and the sensitivity to subsequent hydrostatic compression for electron irradiated p-Ga P crystals with the aim of estimating baric coefficients of ionizing energy of radiation defect levels. It is shown that the model of a semiconductor with an isotropic energy gap allows a correct description of experimental results and gives the possibility of materials selection for sensors of static and dynamic pressure
Additional details
Additional titles
- Original title (Russian)
- Электрофизические свойства и чувствительность к всестороннему сжатию облученного электронами GaP
Publishing Information
- Journal Title
- Izvestiya Vysshikh Uchebnykh Zavedenij, Fizika
- Journal Volume
- 41
- Journal Issue
- 6
- Journal Page Range
- p. 124-126
- ISSN
- 0021-3411
- CODEN
- IVUFAC
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 30054154
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL DEFECTS; DOSE-RESPONSE RELATIONSHIPS; ELECTRIC CONDUCTIVITY; ELECTRONS; ENERGY GAP; FERMI LEVEL; GALLIUM PHOSPHIDES; HIGH PRESSURE; MEV RANGE 01-10; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; PRESSURE DEPENDENCE
- Descriptors DEC
- CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ENERGY LEVELS; ENERGY RANGE; FERMIONS; GALLIUM COMPOUNDS; LEPTONS; MATERIALS; MEV RANGE; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- 7 refs., 1 fig.