Published October 1996 | Version v1
Journal article Metadata-only

Defect accumulation in Si due to successive irradiation by argon and nitrogen ions. (Molecular effect)

Creators

  • 1. Leningradskij Gosudarstvennyj Univ., Leningrad (Russian Federation)

Description

The defect accumulation in Si due to bomardment by nitrogen ions N1+ and N2+ with the same energy 30 keV/atom has been investigated. The preliminary radiation damage in studied samples was produced by argon ions. It has been found that N2+ produces more defects than two N1+ ions. THe preliminary radiation damage is the essential condition for this molecular effect. 11 refs.; 2 figs

Additional details

Additional titles

Original title (Russian)
Накопление дефектов в Си при последовательном облучении ионами аргона и азота. (Молекулярный эффект)

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
30
Journal Issue
10
Journal Page Range
p. 1893-1897.
ISSN
0015-3222
CODEN
FTPPA4

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
28049018
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ARGON IONS; CRYSTAL DEFECTS; ION IMPLANTATION; KEV RANGE 10-100; NITROGEN IONS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON
Descriptors DEC
CHARGED PARTICLES; CRYSTAL STRUCTURE; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; MATERIALS; RADIATION EFFECTS; SEMIMETALS