Annealing study of Er+ implantation in Si by TEM

Annealing study is shown of Er ion implantation in Si by variable temperature observation if transmission electron microscopy and high-electron microscopy (HREM). A continuous amorphous layer is formed on the silicon surface after Er ion implantation into crystalline silicon. During thermal annealing, the amorphous layer is recrystallized by solid-phase epitaxial regrowth from the interface between the amorphous and crystalline layer and by the nucleation of polysilicon in the amorphous layer. There are a lot of microtwins and stacking faults in recrystallized grains. A crystalline silicon layer doped with Er is obtained after high temperature thermal annealing. (author). 5 refs.; 8 figs