Fabrication and performances of NbZr/oxide/NbZr thin film Josephson junctions
- 1. INFN, Lab. Nazionali di Frascati (Italy)
- 2. ENEA-CRE, Frascati (Italy)
- 3. Roma-2 Univ. (Italy)
Description
We report on the fabrication of symmetrical NbZr-Ox-NbZr Josephson junctions by means of thin film RF magnetron sputtering deposition. The insulating barrier consisted of natural oxide thermally grown in air at room temperature. The variation of the superconducting gap Δ as a function of the temperature was measured by recording the I-V characteristics. The experimental data are in good agreement with the dependence numerically computes from the BCS theory. The magnetic behavior of the maximum Josephson current was measured and both the magnetic penetration depth and the Josephson penetration depth were computed. By means of the Kulik theory on the junction self-induced resonances the microwave quality factor Q of the junctions, and the surface impedance of the films have been estimated. (orig.)
Additional details
Publishing Information
- Publisher
- Springer.
- Imprint Place
- Berlin (Germany)
- ISBN
- 3-540-55396-7
- Imprint Title
- Superconducting devices and their applications. Proceedings
- Imprint Pagination
- 618 p.
- Journal Volume
- 64
- Series
- Springer proceedings in physics.
- Journal Page Range
- p. 233-236.
Conference
- Title
- Superconducting devices and their applications.
- Acronym
- 4. international conference on superconducting and quantum effect devices (SQUID-4)
- Dates
- 18-21 Jun 1991.
- Place
- Berlin (Germany).
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 24025600
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BCS THEORY; ENERGY GAP; FABRICATION; JOSEPHSON JUNCTIONS; MAGNETIC FIELDS; MICROWAVE RADIATION; NIOBIUM ALLOYS; OXIDES; PENETRATION DEPTH; PERFORMANCE; QUALITY FACTOR; SPUTTERING; SUPERCONDUCTIVITY; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; THIN FILMS; TUNNEL EFFECT; ZIRCONIUM ALLOYS
- Descriptors DEC
- ALLOYS; CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; FILMS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR JUNCTIONS; TEMPERATURE RANGE