Published November 2021 | Version v1
Journal article

A general phase-field framework for predicting the structures and micromechanical properties of crystalline defects

  • 1. Materials Genome Institute, Shanghai University, 333 Nan Chen Road, Shanghai 200444 (China)
  • 2. Department of Engineering Mechanics, School of Naval Architecture, Ocean & Civil Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)
  • 3. Department of Materials Science and Engineering, The Ohio State University, 2041 College Road, Columbus, OH 43210 (United States)

Description

Highlights: • A phase-field framework is provided to bridge defect structures to properties. • Model input can be solely determined by atomistic calculations. • The predicted stress field of defects can be directly used in mesoscopic analysis. This work provides a phase-field simulation framework that bridges the structure of defects (e.g., dislocations and grain boundaries (GBs)) to their characteristic properties, such as stresses and energies. The validity of the current methodology is examined first by predicting the stress field of a single infinitely long screw dislocation using both the analytical solutions based on anisotropic elasticity and the current phase-field framework. The well-known stress singularity associated with the dislocation core in the former method has been effectively avoided in the latter. The framework is then applied to predicting the dislocation network of {0 0 0 1} twisted GB in Mg, which is found to consist of triangular-shaped regions of stacking faults and perfect crystals separated by partial dislocations. This prediction is consistent with some existing atomistic simulations and the underlying formation mechanism is analyzed rigorously using the displacement field predicted by our model, revealing the energy minimization process via the dissociation of a 112¯0/3 screw dislocation into a pair of 1100/3 screw dislocations. Based on the structure prediction, the associated stress field is further simulated, which provides critical information in evaluating the interaction of GBs and other crystalline defects such as impurities and dislocations.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.matdes.2021.109959

Additional details

Identifiers

DOI
10.1016/j.matdes.2021.109959;
PII
S026412752100513X;

Publishing Information

Journal Title
Materials and Design
Journal Volume
209
Journal Page Range
vp.
ISSN
0264-1275
CODEN
MADSD2

Optional Information

Copyright
Copyright (c) 2021 The Authors. Published by Elsevier Ltd.