Determination of oxygen in silicon after ion-implantation through a SiO2 layer, using the reaction 18O/p,α/15N

The recoil implantation yield of oxygen atoms recoiled from 18O-enriched SiO2 layers into silicon substrates has been studied using the 18O/p,α/15N nuclear reaction. The method to determine the number of oxygen atoms in silicon is described in detail and the results are compared to the theoretical predictions. Some diagrams are shown on the energy spectrum of alpha-particles resulting from the used nuclear reaction, on the rate of backscattering of oxygen atoms at various SiO2-layers etc. The method is supposed to be useful for the control of ion implantation in the technology. (T.G.)