Published October 3, 2011
| Version v1
Journal article
Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy
Creators
- 1. FEI Company, Achtseweg Noord 5, 5600 KA Eindhoven (Netherlands)
- 2. Materials Science and Engineering, University of Delaware, Newark, Delaware 19716-1501 (United States)
Description
The structure of epitaxially grown InAlAs/InP interfaces was studied using atomically resolved x-ray energy dispersive spectroscopy in scanning transmission electron microscopy. As and P sublattices show sharp termination on the interface. The In sublattice is continuous across the interface. The study has shown the depletion of the Al concentration at the interface; at the last atomic columns of the InAlAs, In occupancy is close to 100%, while Al occupancy is almost zero. A monolayer of InAs at the interface is consistent with substitution of As for P at the surface preceding growth.
Additional details
Identifiers
- DOI
- 10.1063/1.3645632;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 99
- Journal Issue
- 14
- Journal Page Range
- p. 141904-141904.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43116030
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM COMPOUNDS; CRYSTAL GROWTH; EPITAXY; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTERFACES; LAYERS; SEMICONDUCTOR MATERIALS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; X RADIATION; X-RAY SPECTROSCOPY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; INDIUM COMPOUNDS; IONIZING RADIATIONS; MATERIALS; MICROSCOPY; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATIONS; SPECTROSCOPY
Optional Information
- Notes
- (c) 2011 American Institute of Physics