Influence of the deposition method on interdiffusion of Ni/Ag bilayer thin films
- 1. Iranian National Center for Laser Science and Technology, PO Box 14665-576, Tehran (Iran, Islamic Republic of)
- 2. Department of Physics, University of Sistan and Baluchestan, 98135-674 Zahedan (Iran, Islamic Republic of)
Description
In this study, it has been shown that the dependence of interdiffusion phenomena in metallic thin films is largely related to the deposition method. Films were prepared by evaporation and unbalanced magnetron sputtering onto glass substrates. Rutherford backscattering spectrometry was used for quantitative compositional analysis of thin films, determination of structures and observation of interdiffusion in bilayer Ni/Ag films. The structures of the films were monitored by x-ray diffraction. The experimental results confirm that evaporated films are in a state of tensile stress, which increases the vacancy concentration and diffusion, whereas sputtered films are under compressive stress, which decreases the vacancy concentration, thus preventing diffusion. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0022-3727/45/20/205302Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 45
- Journal Issue
- 20
- Journal Page Range
- [7 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43112163
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DEPOSITION; DIFFUSION; EVAPORATION; GLASS; LAYERS; MAGNETRONS; NICKEL; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILVER; SPUTTERING; STRESSES; THIN FILMS; VACANCIES; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFRACTION; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; METALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; PHASE TRANSFORMATIONS; POINT DEFECTS; SCATTERING; SPECTROSCOPY; TRANSITION ELEMENTS