Published April 2000
| Version v1
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Effect of impurity correlation in heavily modulation-doped quantum wires
- 1. Abdus Salam International Centre for Theoretical Physics, Trieste (Italy)
- 2. Center for Theoretical Physics, National Center for Natural Science and Technology, Hanoi (Viet Nam)
- 3. Institute of Engineering Physics, Hanoi University of Technology, Hanoi (Viet Nam)
Description
A theory is given of the electronic properties of modulation-doped quantum wires which undergo a thermal treatment, taking into account Coulomb interactions among the impurities in the sample preparation. The impurity correlation weakens their field and is enhanced when elevating the doping level, lowering the freezing temperature for impurity diffusion, and reducing the size of the impurity system. In the limiting case of a 1D impurity system, the ionic correlation may suppress the impurity field even at a low doping level. For a very thin impurity system, the electron mobility of the wire may be increased by up to some orders of magnitude at a high doping level. (author)
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Additional details
Publishing Information
- Imprint Pagination
- 13 p.
- Report number
- IC--2000/50
INIS
- Country of Publication
- International Atomic Energy Agency (IAEA)
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 31026551
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CORRELATIONS; DOPED MATERIALS; ELECTRON MOBILITY; IMPURITIES; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- MATERIALS; MOBILITY; PARTICLE MOBILITY
Optional Information
- Notes
- 20 refs, 4 figs