Published January 1, 1982 | Version v1
Journal article Metadata-only

Physical basis of scattering potential at grain boundary of polycrystalline semiconductors

Creators

  • 1. Department of Electrical Engineering, Columbia University, New York, New York 10027

Description

A physical theory using a charge scattering model is proposed to interpret the experimental data of grain boundary transport in polycrystalline semiconductors. The calculated result explains the need of an attenuation factor as an added coefficient in the thermionic emission current

Additional details

Publishing Information

Journal Title
Appl. Phys. Lett.
Journal Volume
40
Journal Issue
1
Series
Appl. Phys. Lett.
Journal Page Range
49-51
ISSN
0003-6951

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
13666526
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
DATA; GRAIN BOUNDARIES; MATHEMATICAL MODELS; POLYCRYSTALS; POTENTIALS; SCATTERING; SEMICONDUCTOR MATERIALS; THEORETICAL DATA; THERMIONIC EMISSION
Descriptors DEC
CRYSTAL STRUCTURE; CRYSTALS; EMISSION; INFORMATION; MICROSTRUCTURE; NUMERICAL DATA