Published 1987 | Version v1
Report Restricted

Decrease of the presence of defects in GaAs(Si,Sn) epitaxial films and improvement on electric-physical and spectrometric parameters of radiation Si detectors under positron irradiation

  • 1. Academy of Sciences of Siberian Branch USSR, Tomsk. Inst. of Physics of Hardness and Materials
  • 2. Tomskij Politekhnicheskij Inst. (USSR). Inst. Yadernoj Fiziki, Ehlektroniki i Avtomatiki

Description

no abstract available

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Additional details

Publishing Information

Imprint Title
Proceedings of the European Meeting on Studies of Defects
Imprint Pagination
191 p.
Journal Page Range
p. I3.
Report number
PSD--87

Conference

Title
European meeting on positron studies of defects.
Dates
23-27 Mar 1987.
Place
Wernigerode (German Democratic Republic).

Optional Information

Notes
Published in summary form only.