Published March 1998 | Version v1
Report Restricted

Measurement bias dependence of enhanced bipolar gain degradation at low dose rates

Creators

  • 1. Aerospace Corp., Los Angeles, CA (United States). Electronics Technology Center
  • 2. Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical and Computer Engineering
  • 3. RLP Research, Inc., Albuquerque, NM (United States)
  • 4. Sandia National Labs., Albuquerque, NM (United States)

Description

Oxide trapped charge, field effects from emitter metallization, and high level injection phenomena moderate enhanced gain degradation of lateral pnp transistors at low dose rates. Hardness assurance tests at elevated irradiation temperatures require larger design margins for low power measurement biases

Availability note (English)

Available from INIS in electronic form; ALSO AVAILABLE FROM OSTI AS DE98005027; NTIS; US GOVT. PRINTING OFFICE DEP.

Files

Restricted

The record is publicly accessible, but files are restricted to users with access.

Additional details

Publishing Information

Imprint Pagination
6 p.
Report number
SAND--98-0623C

Conference

Title
IEEE nuclear and space radiation effects conference
Dates
20-24 Jul 1998
Place
Newport Beach, CA (United States)

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
30009483
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ELECTRICAL PROPERTIES; JUNCTION TRANSISTORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SPACE FLIGHT; TESTING; TRAPS
Descriptors DEC
PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Contract/Grant/Project number
Contract AC04-94AL85000
Funding organization
USDOE, Washington, DC (United States)
Secondary number(s)
CONF-980705--