Published May 15, 2005 | Version v1
Journal article

Ion-beam-induced chemical-vapor deposition of FePt and CoPt particles

  • 1. Information Storage Materials Laboratory, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan)

Description

FePt and CoPt particles have been directly deposited on Si3N4 substrate by ion-beam-induced chemical-vapor deposition (IBICVD) with a focused ion-beam system. The as-deposited FePt particles are amorphous and crystallize into fcc structure after annealing at 600 deg. C. The as-deposited CoPt particles and the CoPt particles annealed at 600 deg. C are both in fcc structure, but annealing improves the crystallization of the CoPt particles. After applying a 20-kOe magnetic field perpendicular to the Si3N4 substrate, the magnetic force microscopy images of annealed FePt and CoPt particles both show concentric domain patterns, implying the alternately up- and downward perpendicular components of magnetizations. The successful fabrication of FePt and CoPt particles may lead to the potential application of IBICVD for nanoparticles and clusters which have not been synthesized yet

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
97
Journal Issue
10
Journal Page Range
p. 10K308-10K308.3
ISSN
0021-8979
CODEN
JAPIAU

Conference

Title
49. annual conference on magnetism and magnetic materials
Dates
7-11 Nov 2004
Place
Jacksonville, FL (United States)

Optional Information

Notes
(c) 2005 American Institute of Physics