Simulation study of InGaN intermediate-band solar cells

The performances of single-junction InGaN solar cells with various intermediate bands (IBs) have been simulated using the lifetime model of a 1D simulation program called Analysis of Microelectronic and Photonic Structures (AMPS-1D). It has been observed that the maximum efficiencies of the InGaN solar cells with one, two and three intermediate bands are 47.72%, 55.10% and 58.20%, respectively, which outperform the 25.96% efficiency of the conventional single-junction structure by far. This is primarily attributed to the outstanding capability of the light harvesting from the sub-bandgap absorption. At the optimized bandgap of 2.41 eV, two-IB InGaN solar cells with the IB positions located at 0.95–1.1 eV and 0.3–0.75 eV, respectively, may have an opportunity to realize over 50% efficiency. (paper)