Slow recombination centers in cadmium selenide monocrystalline films

As a result of annealing when concentration of selenium Vacancies decreases due to their diffusion towards the surface, show recombination K-centers begin to influence the photoelectric properties of monocrystalline cadmium selenide layers. Energy levels of K-centers are located by 0.23-0.25 eV over the valent zone ceiling. The nature of K-centers is determined by the presence in the cadmium selenide layer structure of intrisic defects-cadmium vacancies in contrast to r-centers of slow recombination which are bound with impurities in a semiconductor material