Published October 2012
| Version v1
Journal article
Electronic and optical properties of non-uniformly shaped InAs/InP quantum dashes
- 1. Institute of Physics, Wrocław University of Technology, 50-370 Wrocław (Poland)
Description
We theoretically study the optical properties and the electronic structure of highly elongated InAs/InP quantum dots (quantum dashes) and show how carrier trapping due to geometrical fluctuations of the confining potential affects the excitonic spectrum of the system. We focus on the study of the optical properties of a single exciton confined in the structure. The dependence of the absorption and emission intensities on the geometrical properties (size and position) of the trapping centre within the quantum dash is analysed and the dependence of the degree of linear polarization on these geometrical parameters is studied in detail. The role of Coulomb correlations for the optical properties of these structures is clarified. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0268-1242/27/10/105012Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 27
- Journal Issue
- 10
- Journal Page Range
- [8 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45014191
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ABSORPTION; ELECTRONIC STRUCTURE; INDIUM ARSENIDES; INDIUM PHOSPHIDES; OPTICAL PROPERTIES; POLARIZATION; QUANTUM DOTS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; INDIUM COMPOUNDS; NANOSTRUCTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SORPTION