Published December 2015
| Version v1
Journal article
First-principles study on graphene/hexagonal boron nitride heterostructures
Creators
- 1. Tokyo Univ., Dept. of Applied Physics, Tokyo (Japan)
- 2. Tokyo Inst. of Technology, Dept. of Physics, Tokyo (Japan)
- 3. Dept. of Physics, Univ. of California, Berkeley, CA (United States)
Description
This article reviews recent progresses in first-principles studies on graphene/hexagonal boron nitride (h-BN) heterostructures. The experimental demonstration of the usefulness of hexagonal boron nitride as a substrate for graphene devices has attracted considerable interest of graphene/h-BN heterostructure systems. More complicated graphene/h-BN heterostructures have also been fabricated in recent years. In parallel with the experimental progress, first-principles studies have also revealed interesting properties of these heterostructures. The structural and electronic properties of the graphene/h-BN heterostructures are discussed here based on the recent first-principles results. (author)
Availability note (English)
Available from http://dx.doi.org/10.7566/JPSJ.84.121002Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of the Physical Society of Japan
- Journal Volume
- 84
- Journal Issue
- 12
- Journal Page Range
- p. 121002.1-121002.11
- ISSN
- 0031-9015
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 47078847
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BORON NITRIDES; ELECTRONIC STRUCTURE; GRAPHENE; HEXAGONAL LATTICES; LATTICE PARAMETERS; LAYERS; REVIEWS; SEMICONDUCTOR DIODES; SUBSTRATES; SUPERLATTICES; THIN FILMS
- Descriptors DEC
- BORON COMPOUNDS; CARBON; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DOCUMENT TYPES; ELEMENTS; FILMS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PNICTIDES; SEMICONDUCTOR DEVICES; THREE-DIMENSIONAL LATTICES
Optional Information
- Notes
- 129 refs., 12 figs., 2 tabs.