Implantation of oxygen ions for the realization of SOS (silicon on insulator) structures: SIMOX

Highdose oxygen implantation is becoming a serious candidate for SOI (silicon on insulator) structure realization. The fabrication condition study of these substrates allowed to show up the implantation and annealing parameter importance for microstructure, and particularly for crystal quality of silicon films. It has been shown that the use of high temperature annealings leads to high quality substrates: monocrystal silicon film without any precipitate, at the card scale; Si/Si O2 interface formation. After annealing at 1340OC, Hall mobilities have been measured in silicon film, and its residual doping is very low. First characteristics and performance of submicron CMOS circuits prooves the electric quality of these substrates