Exchange-Driven Chern States in High-Mobility Intrinsic Magnetic Topological Insulators
Creators
- 1. Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, USA
- 2. Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA
- 3. 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
- 4. Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
Description
The layer-dependent Chern number () in is characterized by the presence of a Weyl semimetal state in the ferromagnetic coupling. However, the influence of a key factor, namely, the exchange coupling, remains unexplored. This study focuses on characterizing the state in , which is classified as a higher state resulting from the anomalous Landau levels (LLs). Our findings demonstrate that the exchange coupling parameter strongly influences the formation of this Chern state, leading to a competition between the and 2 states. Moreover, the emergence of odd-even LL sequences, resulting from the breaking of LL degeneracy, provides compelling evidence for the strong exchange coupling strength. These findings highlight the significance of the exchange coupling in understanding the behavior of Chern states and LLs in magnetic quantum systems.
Additional details
Identifiers
- DOI
- 10.1103/PhysRevLett.132.146601;
- Crossref Funder ID
- 10.13039/100000001; 10.13039/100000183; 10.13039/100014036;
Publishing Information
- Journal Title
- Physical Review Letters
- Journal Volume
- 132
- Journal Issue
- 14
- Journal Page Range
- 6 pgs.
- ISSN
- 0031-9007
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- BISMUTH COMPOUNDS; CARRIER MOBILITY; COUPLING; COUPLING CONSTANTS; COUPLINGS; DIELECTRIC MATERIALS; ELECTRICAL INSULATORS; EXCHANGE INTERACTIONS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; LAYERS; MANGANESE OXIDES; MOBILITY; QUANTUM SYSTEMS; SEMIMETALS; TOPOLOGY
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; INTERACTIONS; MAGNETIC MATERIALS; MAGNETISM; MANGANESE COMPOUNDS; MATERIALS; MATHEMATICS; MOBILITY; OXIDES; OXYGEN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- © 2024 American Physical Society
- Contract/Grant/Project number
- 1936383; DMR-2039351; DMR 2211327; W911NF-20-2-0166; 2DCC-MIP
- Notes
- Contact Email: Corresponding author: sukongc@g.ucla.edu; Contact Email: Corresponding author: wang@seas.ucla.edu; Record automatically processed
- Funding organization
- National Science Foundation; Army Research Office; Multidisciplinary University Research Initiative; Penn State 2D Crystal Consortium-Materials Innovation Platform