The model oxidation catalyst α-V2O5: insights from contactless in situ microwave permittivity and conductivity measurements
Creators
- 1. Fritz-Haber-Institut der Max-Planck-Gesellschaft, Department of Inorganic Chemistry, Berlin (Germany)
Description
The in situ microwave cavity perturbation technique was used to study the complex permittivity and conductivity of polycrystalline α-V2O5 in a tubular reactor under reactive high-temperature conditions with a TM110 cavity resonating at 9.2 GHz. The sample was investigated at 400 C in flowing air and air/n-butane mixtures while simultaneously measuring the total oxidation products CO and CO2 by gas chromatography. The V2O5 powder was identified as an n-type semiconductor and the dynamic microwave conductivity correlated well with the near-infrared (NIR) absorption assigned to V3d1 band gap states. Correlations between catalytic performance, real and imaginary parts of the permittivity, and NIR absorption allowed the differentiation between bulk and surface contributions to the charge transport in reactive atmospheres. The stability of the crystalline bulk phase was proven by in situ powder X-ray diffractometry for all applied testing conditions. (orig.)
Availability note (English)
Available from: http://dx.doi.org/10.1007/s00339-013-7800-6Additional details
Identifiers
Publishing Information
- Journal Title
- Applied Physics. A, Materials Science and Processing
- Journal Volume
- 112
- Journal Issue
- 2
- Journal Page Range
- p. 289-296
- ISSN
- 0947-8396
- CODEN
- APAMFC
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 44093739
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- BAND THEORY; CATALYSTS; DEBYE-SCHERRER METHOD; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; ENERGY GAP; ENERGY SPECTRA; EXPERIMENTAL DATA; GHZ RANGE 01-100; N-TYPE CONDUCTORS; PERMITTIVITY; POLYCRYSTALS; SPECTRAL REFLECTANCE; TEMPERATURE RANGE 0400-1000 K; ULTRAVIOLET SPECTRA; VANADIUM OXIDES; VISIBLE SPECTRA; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; CRYSTALS; DATA; DIELECTRIC PROPERTIES; DIFFRACTION; DIFFRACTION METHODS; ELECTRICAL PROPERTIES; FREQUENCY RANGE; GHZ RANGE; INFORMATION; MATERIALS; NUMERICAL DATA; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SCATTERING; SEMICONDUCTOR MATERIALS; SPECTRA; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS