Published April 1975 | Version v1
Report Restricted

Thick sputter-deposited insulators

Creators

Description

Preparation of sputtered coatings of Al2O3, Y2O3, and AlN is described. The Al2O3 deposits showed an x-ray diffraction pattern characteristic of an amorphous structure. The Y2O3 deposits showed an x-ray diffraction pattern characteristic of cubic lattices. The AlN deposits were stoichiometric single-phase. (U.S.)

Availability note (English)

MF available from INIS under the Report Number.

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Additional details

Publishing Information

Imprint Pagination
3 p.
Report number
BNWL-SA--5244

Conference

Title
77. annual meeting of the American Ceramic Society.
Dates
3 May 1975.
Place
Washington, District of Columbia, USA.

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
6212846
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM NITRIDES; ALUMINIUM OXIDES; COATINGS; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; SPUTTERING; YTTRIUM OXIDES
Descriptors DEC
ALUMINIUM COMPOUNDS; CHALCOGENIDES; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS

Optional Information

Secondary number(s)
CONF-750542--2.