Published January 20, 1998
| Version v1
Journal article
Photocurrent saturation at GaAs(Cs,O)
Creators
- 1. Institute of Semiconductor Physics, 630090 Novosibirsk (Russian Federation)
- 2. Novosibirsk State University, 630090 Novosibirsk (Russian Federation)
Description
The photocurrent from p+-GaAs photocathodes under the intensive pulse illumination is experimentally studied within the temperature range of 77-300 K. The line-shape of the photocurrent pulses is evidently influenced by surface photovoltage effect and is found to be a weak function of temperature. This observation proves that hole tunnelling is the main component of the restoring current
Additional details
Identifiers
- DOI
- 10.1063/1.54975;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 421
- Journal Issue
- 1
- Journal Page Range
- p. 485-486
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 7. international workshop on polarized gas targets and polarized beams
- Dates
- 18-22 Aug 1997
- Place
- Urbana, IL (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40056702
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRON EMISSION; GALLIUM ARSENIDES; HOLES; P-TYPE CONDUCTORS; PHOTOCATHODES; PHOTOVOLTAIC EFFECT; PULSES; SPIN; SURFACES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TUNNEL EFFECT
- Descriptors DEC
- ANGULAR MOMENTUM; ARSENIC COMPOUNDS; ARSENIDES; CATHODES; ELECTRODES; EMISSION; GALLIUM COMPOUNDS; MATERIALS; PARTICLE PROPERTIES; PHOTOELECTRIC EFFECT; PNICTIDES; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 1998 American Institute of Physics.