Growth and characterization of Mn-doped cubic-GaN
- 1. Nanotechnology Research Institute (NRI) and Research Consortium for Synthetic Nano-Function Materials Project (SYNAF), National Institute of Advanced Industrial Science and Technology - AIST, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)
- 2. Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan)
- 3. Institute of Materials Science, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)
Description
We report on the growth and characterization of Mn-doped cubic-GaN films. The n-type carriers, which are resulting from the formation of nitrogen vacancies, were intentionally utilized. For a 3% Mn sample with a high carrier density (∼1x102 cm-3), we found substitutional Mn atoms on both the Ga-site and N-site, i.e. (Ga,Mn)N and Ga(N,Mn) exist together. A ferromagnetic behavior was observed in this sample at low temperature (∼5 K), although a 3% Mn semi-insulating sample in which Mn atoms substitute only the Ga-sites in the cubic-GaN lattice showed paramagnetism even at low temperature. The structural and magnetic properties of the relatively high Mn composition (≥5%) samples were found to be governed by precipitate clusters of antiferromagnetic GaMn3N and ferromagnetic Mn4N
Additional details
Identifiers
- DOI
- 10.1016/j.physb.2005.12.166;
- PII
- S0921-4526(05)01554-1;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 376-377
- Journal Page Range
- p. 658-662
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 23. international conference on defects in semiconductors
- Dates
- 24-29 Jul 2005
- Place
- Awaji Island (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37073214
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANTIFERROMAGNETISM; ATOMS; CARRIER DENSITY; CUBIC LATTICES; DOPED MATERIALS; FILMS; GALLIUM NITRIDES; MAGNETIC PROPERTIES; MANGANESE ADDITIONS; MANGANESE NITRIDES; MOLECULAR BEAM EPITAXY; N-TYPE CONDUCTORS; NITROGEN; PARAMAGNETISM; PLASMA; VACANCIES
- Descriptors DEC
- ALLOYS; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELEMENTS; EPITAXY; GALLIUM COMPOUNDS; MAGNETISM; MANGANESE ALLOYS; MANGANESE COMPOUNDS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PHYSICAL PROPERTIES; PNICTIDES; POINT DEFECTS; SEMICONDUCTOR MATERIALS; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.