Published 2019 | Version v1
Journal article

Origin of the butterfly magnetoresistance in a Dirac nodal-line system

  • 1. Florida State University, Tallahassee, FL (United States)
  • 2. Iowa State University, Ames, IA (United States)

Description

Here, we report a study on the magnetotransport properties and on the Fermi surfaces (FS) of ZrSi(Se,Te) semimetals. Density-functional theory (DFT) calculations, in absence of spin orbit coupling (SOC), reveal that both the Se and the Te compounds display Dirac nodal lines (DNL) close to the Fermi level εF at symmorphic and nonsymmorphic positions, respectively. We find that the geometry of their FSs agrees well with DFT predictions. ZrSiSe displays low residual resistivities, pronounced magnetoresistivity, high carrier mobilities, and a butterflylike angle-dependent magnetoresistivity (AMR), although its DNL is not protected against gap opening. As in Cd3As2, its transport lifetime is found to be 102 to 103 times larger than its quantum one. ZrSiTe, which possesses a protected DNL, displays conventional transport properties. Our evaluation indicates that both compounds most likely are topologically trivial. Nearly angle-independent effective masses with strong angle-dependent quantum lifetimes lead to the butterfly AMR in ZrSiSe.

Availability note (English)

Available from https://www.osti.gov/servlets/purl/1594243; https://www.osti.gov/biblio/1594243; DOE Accepted Manuscript full text, or the publishers Best Available Version will be available free of charge after the embargo period

Additional details

Publishing Information

Journal Title
Physical Review B
Journal Volume
100
Journal Issue
12
Journal Page Range
vp.
ISSN
2469-9950