Published July 13, 2015 | Version v1
Journal article

Electronic structure of β-Ga2O3 single crystals investigated by hard X-ray photoelectron spectroscopy

  • 1. School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023 (China)
  • 2. Synchrotron Light Application Center, Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502 (Japan)
  • 3. Synchrotron Radiation Research Organization, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
  • 4. SPring-8 Service Co., Ltd., 2-23-1 Kouto, Kamigori-cho, Ako-gun, Hyogo 678-1205 (Japan)
  • 5. Industrial Application Division, Japan Synchrotron Radiation Institute/SPring8, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan)

Description

By combination of hard X-ray photoelectron spectroscopy (HAXPES) and first-principles band structure calculations, the electronic states of β-Ga2O3 were investigated to deepen the understanding of bulk information for this compound. The valence band spectra of HAXPES presented the main contribution from Ga 4sp, which are well represented by photoionization cross section weighted partial density of states. The experimental data complemented with the theoretical study yield a realistic picture of the electronic structure for β-Ga2O3

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
107
Journal Issue
2
Journal Page Range
p. 022109-022109.5
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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